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| transistor(npn) features driver transistor marking :1h maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 4 v i c collector current -continuous 0.5 a p c collector power dissipation 300 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 4 v collector cut-off current i cbo v cb =60v, i e =0 0.1 a collector cut-off current i ceo v ce =60v, i b =0 0.1 a collector cut-off current i ebo v eb =3v, i c =0 0.1 a h fe1 v ce =1v, i c = 10ma 100 400 dc current gain h fe2 v ce =1v, i c = 100ma 100 collector-emitter saturation voltage v ce (sat) i c =100ma, i b =10ma 0.25 v base-emitter voltage v be v ce =1v, i c = 100ma 1.2 v transition frequency f t v ce = 2v, i c =10ma f= 100mhz 100 mhz so t -23 1. base 2. emitter 3. collector MMBTA05 1 date:2011/05 www.htsemi.com semiconductor jinyu
MMBTA05 2 date:2011/05 www.htsemi.com semiconductor jinyu |
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